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Semiconductors

Test structure

Name: Test structure
MDT-file: test_structure.mdt (147.77 Kb)

Test structure on the base of SiO2 stripes height 0.1µm grating on the silicon wafer. Ion implantation by boron with E=100 keV, annealing and SiO2 layer etching was employed.

On the resulting structure following images were obtained: Fig. 1 - Topography of test structure (contact mode AFM), Fig. 2. - Contact SCM image of the same area.

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